The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

May. 24, 2023
Applicant:

Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;

Inventors:

Zhi Tian, Shanghai, CN;

Tao Liu, Shanghai, CN;

Feng Ji, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2025.01); H10D 84/40 (2025.01);
U.S. Cl.
CPC ...
H10D 84/138 (2025.01); H10D 84/401 (2025.01);
Abstract

The present application discloses a low voltage triggering silicon controlled rectifier which includes: an N well and a P well forming a PN junction, a first P+ region formed in the N well and connected to an anode, and a first N+ region formed in the P well and connected to a cathode. A second P+ region is formed in the N well at the PN junction and diffuses into the P well. A second N+ region is formed in the P well at the PN junction and diffuses into the N well. A first gate structure connected to the anode is formed at the surface of the N well between the first and second P+ regions; and a second gate structure connected to the cathode is formed at the surface of the P well between the first and second N+ regions.


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