The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Apr. 26, 2023
Applicant:

Shanghai Huali Microelectronics Corporation, Shanghai, CN;

Inventors:

Jiacheng Wen, Shanghai, CN;

Zhi Tian, Shanghai, CN;

Feng Ji, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/30 (2023.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H10D 30/6892 (2025.01);
Abstract

The present application discloses a cell structure of a super flash comprising: a word line gate, a floating gate, a control gate, and an erase gate. The floating gate comprises a first TiN layer located on a side face of the control gate and a second polysilicon layer formed at the top of the first TiN layer. The second polysilicon layer is in electric contact with the first TiN layer. The erase gate is located at the top of the second polysilicon layer, and the erase gate and the floating gate are spaced from each other by a second inter-gate dielectric layer therebetween. During erasing, the top angle of the second polysilicon layer generates point discharge, thereby reducing an erasing voltage. The present application also discloses a method for manufacturing a super flash.


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