The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Mar. 27, 2024
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application discloses a device leakage current test method. The method includes: applying a gradually increasing first gate voltage within a range to a gate of the MOS transistor; applying a first drain voltage to a drain of the MOS transistor; reapplying a gradually increasing second gate voltage within a range to the gate of the MOS transistor; reapplying a second drain voltage to the drain of the MOS transistor; reapplying a gradually increasing third drain voltage in a range to the drain of the MOS transistor; detecting a variation of the drain current as the first leakage current; and reapplying a gradually increasing fourth drain voltage to the drain of the MOS transistor, with a step of 0.04 V and a variation range; and detecting a variation of the drain current as the second leakage current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile