The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
May. 01, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Dongyu Xu, Shanghai, CN;
Zhihong Wang, Shanghai, CN;
Hongwen Zhao, Shanghai, CN;
Wenzhan Zhou, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application provides a method for adjusting the local thickness of a photoresist, and a semiconductor front layer structure. The thickness of the photoresist layer in a first region of the stack structure is more than the thickness of the photoresist layer in a second region. The photomask is configured to include an auxiliary pattern for exposing the first region and another pattern for exposing the second region. The first region and the second region of the photoresist layer are exposed simultaneously by one photomask. The exposure intensity is adjusted so that part of the surface of the first region is dissolved during the development, the auxiliary pattern is not transferred to the photoresist layer in the first region, resulting in decreased thickness of the photoresist layer in the first region after development. After development, the other pattern is transferred to the photoresist layer in the second region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile