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Nanchang, China

Lattice Power (Jiangxi) Corporation

USPTO Granted Patents = 24

% Expired Patents = 62.5

EPO Patents = 5

Forward Citations = 103

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19 inventors (with patents filed for the assignee):

Fengyi Jiang (23 out of 23 patents)

Li Wang (23 out of 23 patents)

Wenqing Fang (14 out of 14 patents)

4. Chuanbing Xiong (8 out of 8 patents)

5. Chunlan Mo (5 out of 5 patents)

6. Yingwen Tang (5 out of 5 patents)

7. Guping Wang (4 out of 4 patents)

8. Junlin Liu (4 out of 4 patents)

9. Maoxing Zhou (3 out of 3 patents)

10. Shaohua Zhang (2 out of 2 patents)

11. Hechu Liu (2 out of 2 patents)

12. Hanmin Zhao (1 out of 1 patent)

13. Hao Zhu (1 out of 1 patent)

14. Xiaodong Qu (1 out of 1 patent)

15. Guangxu Wang (1 out of 1 patent)

24 patents: Sort by Forward Citations

1. 9224597 - Method for manufacturing gallium nitride-based film chip (2015-12-29),

2. 8461029 - Method for fabricating InGaN-based multi-quantum well layers (2013-06-11),

3. 8435816 - Method for fabricating InGaAlN light emitting device on a combined substrate (2013-05-07),

4. 8431936 - Method for fabricating a p-type semiconductor structure (2013-04-30),

5. 8431475 - Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature (2013-04-30),

6. 8426325 - Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate (2013-04-23),

7. 8384100 - InGaAIN light-emitting device and manufacturing method thereof (2013-02-26),

8. 8383438 - Method for fabricating InGaAIN light-emitting diodes with a metal substrate (2013-02-26),

9. 8361880 - Semiconductor light-emitting device with metal support substrate (2013-01-29),

10. 8354665 - Semiconductor light-emitting devices for generating arbitrary color (2013-01-15),

11. 8222063 - Method for fabricating robust light-emitting diodes (2012-07-17),

12. 8053757 - Gallium nitride light-emitting device with ultra-high reverse breakdown voltage (2011-11-08),

13. 8044416 - Method for fabricating high-power light-emitting diode arrays (2011-10-25),

14. 7977663 - Semiconductor light-emitting device with a highly reflective ohmic-electrode (2011-07-12),

15. 7943942 - Semiconductor light-emitting device with double-sided passivation (2011-05-17),

Company Overview

Lattice Power (Jiangxi) Corporation is a prominent player in the semiconductor industry, specializing in the development and manufacturing of advanced gallium nitride (GaN) power devices. The company focuses on innovative solutions that enhance energy efficiency and performance across various applications, including consumer electronics and industrial systems. Based in Nanchang, China, Lattice Power is committed to advancing technology in power electronics, contributing to the global shift towards sustainable energy solutions.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

24 Patents

#4 in Nanchang

#1,247 in China

#26,686 in the World

Nanchang, China

Lattice Power (Jiangxi) Corporation

Forward Citations = 103

19 inventors:

Fengyi Jiang (23 out of 23 patents)

Li Wang (23 out of 23 patents)

Wenqing Fang (14 out of 14 patents)

4. Chuanbing Xiong (8 out of 8 patents)

5. Chunlan Mo (5 out of 5 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Lattice Power (Jiangxi) Corporation. Retrieved from https://idiyas.com/company/lattice-power-jiangxi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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