The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
May. 26, 2006
Fengyi Jiang, Nanchang, CN;
LI Wang, Nanchang, CN;
Chuanbing Xiong, Nanchang, CN;
Wenqing Fang, Nanchang, CN;
Hechu Liu, Nanchang, CN;
Maoxing Zhou, Nanchang, CN;
Fengyi Jiang, Nanchang, CN;
Li Wang, Nanchang, CN;
Chuanbing Xiong, Nanchang, CN;
Wenqing Fang, Nanchang, CN;
Hechu Liu, Nanchang, CN;
Maoxing Zhou, Nanchang, CN;
Lattice Power (JIANGXI) Corporation, Nanchang, CN;
Abstract
There is provided an InGaAlN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile