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For the Inventor, By the Inventor

Nanchang, China

Fengyi Jiang

This inventor holds 23 USPTO granted patents and 7 published patent applications and 5 EPO patents, primarily in Semiconductor Devices. Top assignee: Lattice Power (Jiangxi) Corporation. Active years: 2009-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fengyi Jiang. Retrieved from https://idiyas.com/inventor/fengyi-jiang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 34.8

 

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 102(Granted Patents)


Location History:

  • Nanchang, CN (2009 - 2013)
  • Jiang Xi, CN (2010 - 2013)

Company Filing History:

goldMedal23 out of 24 
 
Lattice Power (Jiangxi) Corporation
 patents

Years Active: 2009-2013

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Areas of Expertise:
InGaN
Light-Emitting Diodes
Semiconductor
Gallium Nitride
High-Quality Fabrication
Ohmic Contacts
Metal Substrates
Silicon Substrates
Reflective Electrodes
High-Power Arrays
Color Generation
N-polar Surface
23 patents (USPTO):Explore Patents
1. 8461029 - Method for fabricating InGaN-based multi-quantum well layers (2013-06-11),
2. 8435816 - Method for fabricating InGaAlN light emitting device on a combined substrate (2013-05-07),
3. 8431936 - Method for fabricating a p-type semiconductor structure (2013-04-30),
4. 8431475 - Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature (2013-04-30),
5. 8426325 - Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate (2013-04-23),
6. 8384100 - InGaAIN light-emitting device and manufacturing method thereof (2013-02-26),
7. 8383438 - Method for fabricating InGaAIN light-emitting diodes with a metal substrate (2013-02-26),
8. 8361880 - Semiconductor light-emitting device with metal support substrate (2013-01-29),
9. 8354665 - Semiconductor light-emitting devices for generating arbitrary color (2013-01-15),
10. 8222063 - Method for fabricating robust light-emitting diodes (2012-07-17),
11. 8053757 - Gallium nitride light-emitting device with ultra-high reverse breakdown voltage (2011-11-08),
12. 8044416 - Method for fabricating high-power light-emitting diode arrays (2011-10-25),
13. 7977663 - Semiconductor light-emitting device with a highly reflective ohmic-electrode (2011-07-12),
14. 7943942 - Semiconductor light-emitting device with double-sided passivation (2011-05-17),
15. 7919784 - Semiconductor light-emitting device and method for making same (2011-04-05),

Title: Fengyi Jiang: Pioneering Inventor from Nanchang, China

Introduction: Fengyi Jiang is a distinguished inventor hailing from the vibrant city of Nanchang, China. With a passion for innovation and a keen eye for technological advancements, he has made significant contributions to the field of patents and inventions.

Latest Patents: Fengyi Jiang's latest patents showcase his expertise in cutting-edge technologies, ranging from artificial intelligence to renewable energy solutions. His innovative ideas have been recognized globally for their impact and ingenuity.

Career Highlights: Throughout his illustrious career, Fengyi Jiang has been at the forefront of groundbreaking inventions that have revolutionized various industries. His commitment to pushing the boundaries of what is possible has earned him a reputation as a visionary inventor.

Collaborations: Fengyi Jiang has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work across disciplines and sectors has led to the development of innovative solutions that address complex challenges.

Conclusion: In conclusion, Fengyi Jiang's dedication to innovation and his relentless pursuit of excellence have established him as a trailblazing inventor in the global landscape. His work continues to inspire future generations of inventors to push the limits of creativity and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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