The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Aug. 31, 2007
Fengyi Jiang, Nanchang, CN;
LI Wang, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Chunlan MO, Jiang Xi, CN;
Fengyi Jiang, Nanchang, CN;
Li Wang, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Chunlan Mo, Jiang Xi, CN;
Lattice Power (Jiangxi) Corporation, Nanchang, CN;
Abstract
One embodiment of the present invention provides a method for fabricating a group III-V nitride structure with an ohmic-contact layer. The method involves fabricating a group III-V nitride structure with a p-type layer. The method further involves depositing an ohmic-contact layer on the p-type layer without first annealing the p-type layer. The method also involves subsequently annealing the p-type layer and the ohmic-contact layer in an annealing chamber at a predetermined temperature for a predetermined period of time, thereby reducing the resistivity of the p-type layer and the ohmic contact in a single annealing process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile