Jiangxi, China

Li Wang

This inventor holds 23 USPTO granted patents and 6 published patent applications and 5 EPO patents, primarily in Semiconductor Devices. Top assignee: Lattice Power (Jiangxi) Corporation. Active years: 2009-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li Wang. Retrieved from https://idiyas.com/inventor/li-wang-07koq2ih

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 34.8

 

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 102(Granted Patents)


Location History:

  • Jiang Xi, CN (2009 - 2013)
  • Nanchang, CN (2010 - 2013)

Company Filing History:


Years Active: 2009-2013

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Areas of Expertise:
InGaN
Light-Emitting Diodes
Gallium Nitride
Semiconductor Fabrication
Quantum Well Layers
High-Power LED Arrays
Reflective Ohmic Contacts
Silicon Substrates
N-Polar Electrode
Carbon-Based Substrate
Metal Support Substrate
Robust LED Manufacturing
23 patents (USPTO):Explore Patents

Title: Innovations by Li Wang: A Leader in Semiconductor Fabrication

Introduction

Li Wang, an accomplished inventor based in Jiangxi, China, has made significant strides in the field of semiconductor technology. With an impressive portfolio of 23 patents, he has been instrumental in developing innovative methods that enhance the efficiency and performance of semiconductor devices.

Latest Patents

Among his recent contributions, Li Wang has patented groundbreaking techniques, including a method for fabricating InGaN-based multi-quantum well layers. This method revolutionizes the creation of quantum wells by utilizing indium gallium nitride (InGaN) semiconductor material. The process involves a meticulous approach, starting with the fabrication of a potential well at a specific temperature by injecting In and Ga precursor gases. Subsequent steps include adjusting gas flow rates and temperature to anneal and stabilize the well effectively.

Another significant patent by Li Wang is related to the fabrication of an InGaAlN light-emitting device on a combined substrate. This innovative approach includes depositing a single-crystal sacrificial layer on a base substrate, enabling the formation of an InGaAlN light-emitting semiconductor structure. This technology not only facilitates a vertical electrode configuration but also allows for the reuse of the base substrate after transferring the InGaAlN structure.

Career Highlights

Li Wang's career has been marked by his role at Lattice Power Corporation, where he has contributed to advancing semiconductor technologies. His expertise in material science and engineering has positioned him as a leading figure in the industry.

Collaborations

Throughout his career, Li Wang has collaborated with talented individuals such as Fengyi Jiang and Wenqing Fang. Together, they have worked on various projects aimed at enhancing the efficiency and applications of semiconductor materials. Their teamwork exemplifies the spirit of innovation and shared knowledge in the field.

Conclusion

In conclusion, Li Wang's contributions to semiconductor technology through his inventions and patents have positioned him as a key innovator in the industry. His work not only showcases his exceptional talent but also paves the way for future advancements in semiconductor applications. As he continues to innovate, the impact of his inventions will undoubtedly be felt across various technology sectors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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