The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Aug. 19, 2008
Chuanbing Xiong, Jiangxi, CN;
Fengyi Jiang, Jiangxi, CN;
LI Wang, Jiangxi, CN;
Wenqing Fang, Jiangxi, CN;
Guping Wang, Jiangxi, CN;
Shaohua Zhang, Jiangxi, CN;
Chuanbing Xiong, Jiangxi, CN;
Fengyi Jiang, Jiangxi, CN;
Li Wang, Jiangxi, CN;
Wenqing Fang, Jiangxi, CN;
Guping Wang, Jiangxi, CN;
Shaohua Zhang, Jiangxi, CN;
Lattice Power (JIANGXI) Corporation, Nanchang, CN;
Abstract
One embodiment of the present invention provides a method for fabricating light-emitting diodes. The method includes etching grooves on a growth substrate, thereby creating mesas on the growth substrate. The method further includes fabricating on each of the mesas an indium gallium aluminum nitride (InGaAlN) multilayer structure which contains a p-type layer, a multi-quantum-well layer, and an n-type layer. In addition, the method includes depositing one or more metal substrate layers on top of the InGaAlN multilayer structure. Moreover, the method includes removing the growth substrate. Furthermore, the method includes creating electrodes on both sides of the InGaAlN multilayer structure, thereby resulting in a vertical-electrode configuration.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile