The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Aug. 31, 2007
Fengyi Jiang, Nanchang, CN;
LI Wang, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Chunlan MO, Jiang Xi, CN;
Yong Pu, Jiang Xi, CN;
Chuanbing Xiong, Jiang Xi, CN;
Fengyi Jiang, Nanchang, CN;
Li Wang, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Chunlan Mo, Jiang Xi, CN;
Yong Pu, Jiang Xi, CN;
Chuanbing Xiong, Jiang Xi, CN;
Lattice Power (Jiangxi) Corporation, Nanchang, CN;
Abstract
One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile