The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2011

Filed:

Sep. 29, 2006
Applicants:

Fengyi Jiang, Nanchang, CN;

LI Wang, Jiang Xi, CN;

Wenqing Fang, Jiang Xi, CN;

Inventors:

Fengyi Jiang, Nanchang, CN;

Li Wang, Jiang Xi, CN;

Wenqing Fang, Jiang Xi, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.


Find Patent Forward Citations

Jiang, Fengyi. (2011). Semiconductor light-emitting device and method for making same (U.S. Patent No. 7919784). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7919784

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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