The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Aug. 19, 2008
Fengyi Jiang, Jiangxi, CN;
LI Wang, Jiangxi, CN;
Junlin Liu, Jiangxi, CN;
Yingwen Tang, Jiangxi, CN;
Fengyi Jiang, Jiangxi, CN;
Li Wang, Jiangxi, CN;
Junlin Liu, Jiangxi, CN;
Yingwen Tang, Jiangxi, CN;
Lattice Power (JIANGXI) Corporation, Nanchang, CN;
Abstract
A light-emitting device includes a conductive substrate (), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (), a p-type doped semiconductor layer () situated above the n-type doped semiconductor layer (), and a MQW active layer () situated between the p-type and n-type doped semiconductor layer (). The multilayer semiconductor structure is divided by grooves () to form a plurality of independent light-emitting mesas (). At least one light-emitting mesa () comprises a color conversion layer ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile