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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8435816 B1

PDFFull Text
Expired
Date of Patent:
May. 07, 2013

Filed:

Aug. 22, 2008

Method for fabricating ingaaln light emitting device on a combined substrate

Applicants:

Chuanbing Xiong, Jiangxi, CN;

Fengyi Jiang, Jiangxi, CN;

LI Wang, Jiangxi, CN;

Shaohua Zhang, Jiangxi, CN;

Guping Wang, Jiangxi, CN;

Guangxu Wang, Jiangxi, CN;

Inventors:

Chuanbing Xiong, Jiangxi, CN;

Fengyi Jiang, Jiangxi, CN;

Li Wang, Jiangxi, CN;

Shaohua Zhang, Jiangxi, CN;

Guping Wang, Jiangxi, CN;

Guangxu Wang, Jiangxi, CN;

Assignee:

Lattice Power (Jiangxi) Corporation, Nanchang, CN;

Attorneys:

Shun Yao

Park, Vaughan, Fleming & Dowler LLP

Primary Examiner:

Mohsen Ahmadi

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01); H01L 21/36 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.

Find Patent Forward Citations

Xiong, Chuanbing. (2013). Method for fabricating ingaaln light emitting device on a combined substrate (U.S. Patent No. 8435816). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8435816

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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