The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2013
Filed:
Aug. 20, 2007
Fengyi Jiang, Jiang Xi, CN;
LI Wang, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Chunlan MO, Jiang Xi, CN;
Fengyi Jiang, Jiang Xi, CN;
Li Wang, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Chunlan Mo, Jiang Xi, CN;
Lattice Power (Jiangxi) Corporation, Nanchang, CN;
Abstract
One embodiment of the present invention provides a method for fabricating a group III-V p-type nitride structure. The method comprises growing a first layer of p-type group III-V material with a first acceptor density in a first growing environment. The method further comprises growing a second layer of p-type group III-V material, which is thicker than the first layer and which has a second acceptor density, on top of the first layer in a second growing environment. In addition, the method comprises growing a third layer of p-type group III-V material, which is thinner than the second layer and which has a third acceptor density, on top of the second layer in a third growing environment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile