The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Oct. 26, 2006
Fengyi Jiang, Nanchang, CN;
Chuanbing Xiong, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
LI Wang, Jiang Xi, CN;
Fengyi Jiang, Nanchang, CN;
Chuanbing Xiong, Jiang Xi, CN;
Wenqing Fang, Jiang Xi, CN;
Li Wang, Jiang Xi, CN;
Lattice Power (JIANGXI) Corporation, Nanchang, CN;
Abstract
One embodiment of the present invention provides a semiconductor light-emitting device which includes a multi-layer structure. The multilayer structure comprises a first doped layer, an active layer, and a second doped layer. The semiconductor light-emitting device further includes a first Ohmic-contact layer configured to form a conductive path to the first doped layer, a second Ohmic-contact layer configured to form a conductive path to the second doped layer, and a support substrate comprising not less than 15% chromium (Cr) measured in weight percentage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile