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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9224597 B1

PDFFull Text
Date of Patent:
Dec. 29, 2015

Filed:

Nov. 19, 2013

Method for manufacturing gallium nitride-based film chip

Applicants:

Lattice Power (Jiangxi) Corporation, Nanchang, CN;

Shineon (Beijing) Technology Co., Ltd, Beijing, CN;

Inventors:

Hanmin Zhao, Nanchang, CN;

Hao Zhu, Nanchang, CN;

Chuanbing Xiong, Nanchang, CN;

Xiaodong Qu, Nanchang, CN;

Assignees:

Lattice Power (JIANGXI) Corporation, Nanchang, CN;

Shineon (Beijing) Technology Co., Ltd., Beijing, CN;

Attorney:

Hemisphere Law, PLLC

Primary Examiner:

Charles Garber

Assistant Examiner:

Brigitte Paterson

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 21/762 (2006.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0242 (2013.01); H01L 21/02664 (2013.01); H01L 21/76256 (2013.01); H01L 33/0079 (2013.01); H01L 33/0095 (2013.01); H01L 33/405 (2013.01);
Abstract

A method for manufacturing gallium nitride-based film chip is provided. The method comprises: growing a gallium nitride-based semiconductor multilayer structure on a sapphire substrate; thinning and polishing the sapphire substrate; coating a reflecting compound metal layer on the gallium nitride-based semiconductor multilayer structure by evaporating; coating a first glue on the reflecting compound metal layer and solidifying the first glue with a first temporary substrate; peeling the sapphire substrate off by laser; coating a second glue on the peeling surface and solidifying the second glue with a second temporary substrate; removing the first temporary substrate and the first glue; bonding the reflecting compound metal layer with a permanent substrate by eutectic bonding; removing the second temporary substrate and the second glue.

Find Patent Forward Citations

Zhao, Hanmin. (2015). Method for manufacturing gallium nitride-based film chip (U.S. Patent No. 9224597). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9224597

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