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For the Inventor, By the Inventor

Iruma, Japan

Yutaka Shinagawa

This inventor holds 56 USPTO granted patents and 4 EPO patents, primarily in Semiconductor Devices (CPC class G11C). Top assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., Ltd., Floadia Corporation. Active years: 1988-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yutaka Shinagawa. Retrieved from https://idiyas.com/inventor/yutaka-shinagawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 56

% Patents Active = 80.4

 

Average Co-Inventor Count = 5.5

ph-index = 14

Forward Citations = 731(Granted Patents)

Forward Citations (Not Self Cited) = 709(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Koganei, JP (1988 - 1990)
  • Irumak, JP (2002 - 2005)
  • Sayama, JP (2010)
  • Tokyo, JP (2010 - 2018)
  • Iruma, JP (1990 - 2019)
  • Kodaira, JP (2016 - 2020)

Company Filing History:

goldMedal15 out of 3,781 
 
Renesas Technology Corp.
 patents
silverMedal14 out of 336 
 
Hitachi Ulsi Systems Co., Ltd.
 patents
bronzeMedal13 out of 26 
 
Floadia Corporation
 patents
4. 13 out of 7,657 
 
Renesas Electronics Corporation
 patents
5. 7 out of 42,740 
 
Hitachi, Ltd.
 patents
6. 2 out of 5 
 
Hitachi Microcomputer
 patents
7. 2 out of 149 
 
Hitachi Microcomputer Engineering, Ltd.
 patents
8. 8 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 1988-2020

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Areas of Expertise:
Non-volatile Memory
Semiconductor Device
SRAM Cell
Integrated Circuit
Memory Cell
Anti-fuse Memory
Memory Card
Microcomputer
Semiconductor Processing
Voltage Control
Data Transfer Rates
IC Card
56 patents (USPTO):Explore Patents
1. 10680001 - Non-volatile semiconductor memory device (2020-06-09),
2. 10354735 - Semiconductor device (2019-07-16),
3. 10263002 - Anti-fuse memory and semiconductor storage device (2019-04-16),
4. 10115469 - Semiconductor device (2018-10-30),
5. 10102911 - Non-volatile semiconductor storage device for reducing the number of memory cells arranged along a control to which a memory gate voltage is applied (2018-10-16),
6. 10074660 - Semiconductor memory device (2018-09-11),
7. 10074658 - Non-volatile SRAM memory cell and non-volatile semiconductor storage device (2018-09-11),
8. 10038101 - Memory cell and non-volatile semiconductor storage device (2018-07-31),
9. 9842650 - Non-volatile SRAM memory cell, and non-volatile semiconductor storage device (2017-12-12),
10. 9830989 - Non-volatile semiconductor storage device (2017-11-28),
11. 9812211 - Semiconductor device (2017-11-07),
12. 9502109 - Non-volatile semiconductor storage device (2016-11-22),
13. RE46203 - Non-volatile semiconductor memory device (2016-11-14),
14. 9412459 - Semiconductor device (2016-08-09),
15. 9343166 - Non-volatile semiconductor storage device (2016-05-17),

Title: The Innovative Journey of Yutaka Shinagawa

Introduction: Yutaka Shinagawa is a renowned inventor hailing from Iruma, Japan. His groundbreaking work in the field of technology has earned him a well-deserved reputation as a pioneer in innovation.

Latest Patents: Yutaka Shinagawa holds several patents in the realm of electronics and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Yutaka Shinagawa has worked tirelessly to bring his inventive ideas to life. His contributions to the field have revolutionized the way we interact with technology on a daily basis.

Collaborations: Throughout his career, Yutaka Shinagawa has collaborated with leading tech companies and research institutions to further his innovative projects. His ability to work in diverse teams has led to the development of cutting-edge technologies.

Conclusion: Yutaka Shinagawa's passion for innovation and dedication to his craft have solidified his position as a trailblazer in the world of technology. His inventive spirit continues to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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