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Floadia Corporation

USPTO Granted Patents = 26

EPO Patents = 15

Forward Citations = 52

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21 inventors (with patents filed for the assignee):

Yasuhiro Taniguchi (26 out of 64 patents)

Kosuke Okuyama (19 out of 22 patents)

Yasuhiko Kawashima (15 out of 17 patents)

4. Hideo Kasai (13 out of 26 patents)

5. Yutaka Shinagawa (13 out of 56 patents)

6. Shinji Yoshida (9 out of 31 patents)

7. Ryotaro Sakurai (9 out of 16 patents)

8. Fukuo Owada (8 out of 15 patents)

9. Kazumasa Yanagisawa (8 out of 106 patents)

10. Daisuke Okada (5 out of 56 patents)

11. Shoji Yoshida (5 out of 42 patents)

12. Tatsuro Toya (4 out of 4 patents)

13. Satoshi Noda (2 out of 22 patents)

14. Shuichi Sato (1 out of 4 patents)

15. Takafumi Kato (1 out of 23 patents)

Core Competencies:

Memory Cell

Nonvolatile Storage

Semiconductor Device

Camera System

Integrated Circuit

Accumulator

Anti-Fuse Memory

SRAM Memory

Manufacturing Method

Control Voltage

Depletion-Type Channel

Enhancement-Type Channel

26 patents: Sort by Forward Citations

1. 12598743 - Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device (2026-04-07),

2. 11282878 - Solid-state imaging device and camera system (2022-03-22),

3. 11127469 - Nonvolatile semiconductor storage device (2021-09-21),

4. 11100989 - Multiplier-accumulator (2021-08-24),

5. 11011530 - Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device (2021-05-18),

6. 10680001 - Non-volatile semiconductor memory device (2020-06-09),

7. 10615168 - Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device (2020-04-07),

8. 10431589 - Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device (2019-10-01),

9. 10381446 - Memory cell and non-volatile semiconductor storage device (2019-08-13),

10. 10373967 - Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device (2019-08-06),

11. 10276727 - Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device (2019-04-30),

12. 10263002 - Anti-fuse memory and semiconductor storage device (2019-04-16),

13. 10102911 - Non-volatile semiconductor storage device for reducing the number of memory cells arranged along a control to which a memory gate voltage is applied (2018-10-16),

14. 10074660 - Semiconductor memory device (2018-09-11),

15. 10074658 - Non-volatile SRAM memory cell and non-volatile semiconductor storage device (2018-09-11),

Company Overview

Floadia Corporation, based in Tokyo, specializes in advanced semiconductor technologies and innovative solutions for memory devices. The company focuses on developing high-performance, low-power memory solutions that cater to the evolving needs of various industries, including consumer electronics and automotive sectors. With a commitment to research and development, Floadia aims to enhance data storage capabilities and improve overall system efficiency, positioning itself as a key player in the global semiconductor landscape.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

26 Patents

#1,164 in Tokyo

#2,508 in Japan

#24,826 in the World

Floadia Corporation

Forward Citations = 52

21 inventors:

Yasuhiro Taniguchi (26 out of 64 patents)

Kosuke Okuyama (19 out of 22 patents)

Yasuhiko Kawashima (15 out of 17 patents)

4. Hideo Kasai (13 out of 26 patents)

5. Yutaka Shinagawa (13 out of 56 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Floadia Corporation. Retrieved from https://idiyas.com/company/floadia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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