The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Mar. 18, 2016
Floadia Corporation, Kodaira-shi, Tokyo, JP;
Yutaka Shinagawa, Kodaira, JP;
Yasuhiro Taniguchi, Kodaira, JP;
Hideo Kasai, Kodaira, JP;
Ryotaro Sakurai, Kodaira, JP;
Yasuhiko Kawashima, Kodaira, JP;
Tatsuro Toya, Kodaira, JP;
Kosuke Okuyama, Kodaira, JP;
FLOADIA CORPORATION, Tokyo, JP;
Abstract
A non-volatile SRAM memory cell and a non-volatile semiconductor memory device capable of programming SRAM data in a SRAM to a non-volatile memory unit through fast operation of the SRAM are disclosed. A non-volatile semiconductor memory device can achieve reduction in a voltage necessary for a programming operation to program SRAM data to the non-volatile memory unit. Thus, a first access transistor, a second access transistor, a first load transistor, a second load transistor, a first drive transistor, and a second drive transistor included in the SRAM connected with the non-volatile memory unit can each include a gate insulating film having a thickness less than or equal to 4 nm, which achieves fast operation of the SRAM at a lower power supply voltage.