Kodaira, Japan

Ryotaro Sakurai


 

Average Co-Inventor Count = 4.5

ph-index = 4

Forward Citations = 120(Granted Patents)


Location History:

  • Hachioji, JP (2005 - 2010)
  • Kanagawa, JP (2014)
  • Tokyo, JP (2018)
  • Kodaira, JP (2016 - 2020)

Company Filing History:


Years Active: 2005-2020

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16 patents (USPTO):

Title: The Innovations of Ryotaro Sakurai

Introduction

Ryotaro Sakurai is a prominent inventor based in Kodaira, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on enhancing the performance and efficiency of non-volatile memory devices.

Latest Patents

One of Sakurai's latest patents is for a non-volatile semiconductor memory device. This device features a mobile charge collector layer, a mobile charge collecting contact, and a mobile charge collecting wiring layer, all positioned adjacent to a floating gate. This innovative design reduces the number of mobile charges collected near the floating gate, allowing for high-speed operation while minimizing fluctuations in the threshold voltage. Another notable patent is for an anti-fuse memory and semiconductor storage device. This device utilizes a rectifier element of a semiconductor junction structure, which eliminates the need for a conventional control circuit. This advancement allows for the miniaturization of anti-fuse memory and semiconductor memory devices.

Career Highlights

Sakurai has worked with notable companies such as Floadia Corporation and Renesas Technology Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Some of his coworkers include Hideo Kasai and Yutaka Shinagawa. Their collaboration has likely fostered an environment of innovation and creativity in their projects.

Conclusion

Ryotaro Sakurai's contributions to semiconductor technology through his patents demonstrate his commitment to advancing the field. His innovative designs continue to influence the development of efficient memory devices.

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