The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Apr. 20, 2015
Floadia Corporation, Kodaira-shi, Tokyo, JP;
Yutaka Shinagawa, Kodaira, JP;
Hideo Kasai, Kodaira, JP;
Yasuhiko Kawashima, Kodaira, JP;
Ryotaro Sakurai, Kodaira, JP;
Yasuhiro Taniguchi, Kodaira, JP;
FLOADIA CORPORATION, Kodaira-Shi, Tokyo, JP;
Abstract
In a memory unit, voltages required for operations of a capacity transistor in a first well and a writing transistor in a second well are separately applied to a first deep well and a second deep well, without the voltages on the first deep well and the second deep well being restricted by each other. Thus, in the memory unit, each of a voltage difference between the first deep well and the first well and a voltage difference between the second deep well and the second well is made smaller than a voltage difference (18 [V]), at which a tunneling effect occurs, and accordingly a junction voltage between the first deep well and the first well and a junction voltage between the second deep well and the second well are low.