logo

For the Inventor, By the Inventor

Tokyo, Japan

Renesas Technology Corp.


USPTO Granted Patents = 3,781

% Expired Patents = 58.4


Trademarks = 5

Forward Citations = 38,075

Loading Chart...
Loading Chart...

3,245 inventors (with patents filed for the assignee):

goldMedal Hideto Hidaka (104 out of 291 patents)

silverMedal Tsukasa Ooishi (80 out of 293 patents)

bronzeMedal Hiroyuki Mizuno (62 out of 171 patents)

4.  Takashi Ipposhi (53 out of 113 patents)

5.  Koichiro Ishibashi (51 out of 176 patents)

6.  Toshiaki Iwamatsu (50 out of 177 patents)

7.  Koji Nii (49 out of 120 patents)

8.  Hirotaka Nishizawa (49 out of 77 patents)

9.  Shigenobu Maeda (47 out of 206 patents)

10.  Kenichi Osada (41 out of 145 patents)

11.  Kunihiro Katayama (41 out of 107 patents)

12.  Shuji Ikeda (40 out of 142 patents)

13.  Takayuki Kawahara (34 out of 126 patents)

14.  Tadaaki Yamauchi (34 out of 75 patents)

15.  Hideo Miura (34 out of 128 patents)


Core Competencies:
Semiconductor Device
Manufacturing Method
Memory System
Solid-State Sensor
Integrated Circuit
Nonvolatile Memory
Wireless Communication
Data Processor
Power Consumption
Optical Disk Drive
Communication System
Circuit Design

3,781 patents:

1. 9484288 - Semiconductor device and a method of manufacturing the same and a mounting structure of a semiconductor device (2016-11-01),
2. 8552545 - Manufacturing method for semiconductor device, semiconductor device and semiconductor chip (2013-10-08),
3. 8462251 - Solid-state image sensor device and differential interface thereof (2013-06-11),
4. 8404586 - Manufacturing method for semiconductor device (2013-03-26),
5. 8387113 - Communication system, authentication method, information processing device, information processing method, and battery (2013-02-26),
6. 8384888 - Mask defect measurement method, mask quality determination and method, and manufacturing method of semiconductor device (2013-02-26),
7. 8173332 - Reflection-type exposure mask and method of manufacturing a semiconductor device (2012-05-08),
8. 8089163 - Semiconductor device production method and semiconductor device (2012-01-03),
9. 8027352 - Gateway apparatus and data managing method (2011-09-27),
10. 8023325 - Semiconductor memory having electrically erasable and programmable semiconductor memory cells (2011-09-20),
11. 7982275 - Magnetic element having low saturation magnetization (2011-07-19),
12. 7969256 - Signal transmission circuit and signal transmission system with reduced reflection (2011-06-28),
13. 7968396 - Semiconductor device and manufacturing method of the semiconductor device (2011-06-28),
14. 7965563 - Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein (2011-06-21),
15. 7960076 - Reflective-type mask (2011-06-14),
Renesas Technology Corp., headquartered in Tokyo, Japan, is a leading provider of semiconductor solutions. The company specializes in the development and manufacturing of a wide range of semiconductor devices, including integrated circuits and nonvolatile memory. Renesas focuses on key technology areas such as wireless communication, memory systems, solid-state sensors, and data processors, catering to diverse industries including automotive, industrial, and consumer electronics. Its innovations are pivotal in advancing smart technology applications globally.
Profile summary based on public USPTO records.

logo

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

Renesas Technology Corp.
3,781 Patents

#33 in Tokyo

#63 in Japan

#241 in the World

Tokyo, JP
Tokyo, Japan

Renesas Technology Corp.

Forward Citations = 38,075

3,245 inventors:

goldMedal Hideto Hidaka (104 out of 291 patents)

silverMedal Tsukasa Ooishi (80 out of 293 patents)

bronzeMedal Hiroyuki Mizuno (62 out of 171 patents)

4.  Takashi Ipposhi (53 out of 113 patents)

5.  Koichiro Ishibashi (51 out of 176 patents)

Please report any incorrect information to [email protected]
Loading…