logo

For the Inventor, By the Inventor

Tokyo, Japan

Shigenobu Maeda

This inventor holds 206 USPTO granted patents, primarily in Semiconductor Devices (CPC class H01L29-785). Top assignees: Mitsubishi Denki Kabushiki Kaisha, Samsung Electronics Co., Ltd., Renesas Technology Corp.. Active years: 1995-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigenobu Maeda. Retrieved from https://idiyas.com/inventor/shigenobu-maeda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 206

% Patents Active = 75.7

Average Co-Inventor Count = 2.6

ph-index = 25

Forward Citations = 2,079(Granted Patents)

Forward Citations (Not Self Cited) = 2,014(Dec 10, 2025)


Inventors with similar research interests:

🔬 See more inventors

Location History:

  • Itami, JP (1996)
  • Tokyo, 100, JP (2001)
  • Tokyko, JP (2001)
  • Chiyoda-ku, JP (2003)
  • Hyogo, JP (1995 - 2006)
  • Seoul, KR (2007 - 2009)
  • Sungnam-si, KR (2009)
  • Tokyo, JP (1998 - 2010)
  • Kyeonggi-Do, KR (2011)
  • Gyeonggi-do, KR (2016)
  • Seongnam-Si, KR (2008 - 2023)

Company Filing History:

goldMedal84 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
silverMedal73 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal47 out of 3,781 
 
Renesas Technology Corp.
 patents
4. 5 out of 52 
 
Ryoden Semiconductor System Engineering Corporation
 patents
5. 2 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 1995-2023

Loading Chart...
Areas of Expertise:
Semiconductor Device
Field Effect Transistor
Low Noise LSI
Fabrication Method
Stacked Structure
Active Fins
Contact Structures
Pattern Structure
Gate Structures
Fuse Structure
Signal Conversion
Two-Dimensional Atomic Layer
206 patents (USPTO):Explore Patents
1. 11695044 - Semiconductor device having stacked structure with two-dimensional atomic layer (2023-07-04),
2. 11640797 - Display driver IC for low voltage signal conversion and electronic device comprising the same (2023-05-02),
3. 11322592 - Field effect transistor with channel layer with atomic layer, and semiconductor device including the same (2022-05-03),
4. 10868125 - Semiconductor devices including field effect transistors and methods of forming the same (2020-12-15),
5. 10861934 - Semiconductor devices including protruding insulation portions between active fins (2020-12-08),
6. 10854465 - Method of fabricating pattern structure (2020-12-01),
7. 10840244 - Semiconductor device (2020-11-17),
8. 10749000 - Field effect transistor with channel layer, and semiconductor device including the same (2020-08-18),
9. 10418448 - Semiconductor devices including field effect transistors and methods of forming the same (2019-09-17),
10. 10411129 - Methods of fabricating semiconductor devices (2019-09-10),
11. 10403717 - Semiconductor devices including contact structures that partially overlap silicide layers (2019-09-03),
12. 10319814 - Semiconductor devices including protruding insulation portions between active fins (2019-06-11),
13. 10242917 - Semiconductor devices including active fins and methods of manufacturing the same (2019-03-26),
14. 10032638 - Method of fabricating pattern structure (2018-07-24),
15. 9966376 - Semiconductor devices and inverter having the same (2018-05-08),

Title: Shigenobu Maeda: Pushing the Boundaries of Semiconductor Technologies

Introduction:

In the fast-paced world of technology and innovation, individuals like Shigenobu Maeda stand out for their exceptional contributions. Hailing from Tokyo, Japan, Maeda is a renowned inventor and engineer who has made significant advancements in the field of semiconductor devices. With an impressive portfolio of over 206 patents, Maeda's groundbreaking work has revolutionized the industry. This article delves into his latest patents, career highlights, collaborations, and the impact of his innovations.

Latest Patents:

Shigenobu Maeda's recent patents demonstrate his focus on cutting-edge semiconductor technologies. Notably, he developed a semiconductor device with a stacked structure consisting of two-dimensional atomic layers. This novel device comprises stacked active layers with gate electrodes and channels made of atomic layers, enabling enhanced performance and efficiency. Additionally, Maeda's contribution to the development of a display driver IC for low voltage signal conversion showcases his expertise in digital-analog conversion, shifting the paradigm of display technology towards more power-efficient solutions.

Career Highlights:

Maeda's illustrious career spans several leading companies in the industry. He has held pivotal roles at Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation) and Samsung Electronics Co., Ltd. These globally recognized organizations have provided Maeda with the platform to realize his visionary ideas and translate them into practical applications. Through his contributions, he has helped bring cutting-edge semiconductor technologies to the market.

Collaborations:

Throughout his career, Shigenobu Maeda has worked alongside esteemed colleagues, further enriching his scientific endeavors. Notably, Toshiaki Iwamatsu and Shigeto Maegawa have been among his esteemed coworkers. Their collective expertise and collaboration have undoubtedly shaped the landscape of semiconductor advancements, driving forward the boundaries of innovation.

Conclusion:

Shigenobu Maeda's relentless pursuit of innovation and his prowess in the field of semiconductor technologies have garnered him great acclaim. With over 206 patents to his name, his contributions have played a vital role in shaping the industry. Maeda's latest patents, including the development of a stacked semiconductor device and the display driver IC for low voltage signal conversion, have the potential to drive significant advancements in countless electronic devices. As we navigate the future, his work will continue to inspire and pave the way for further innovation in the realm of semiconductors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…