The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Mar. 05, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/267 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 29/04 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/2003 (2013.01); H01L 29/22 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/66742 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H01L 29/78618 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device, a field effect transistor, and a fin field effect transistor are provided. The semiconductor device may include a channel layer, a source/drain layer, and a gate electrode. The channel layer is provided on a substrate and extends in a direction perpendicular to a top surface of the substrate. The source/drain layer is disposed at a side of the channel layer and is electrically connected to the channel layer. The gate electrode is provided adjacent to at least one of surfaces of the channel layer. The channel layer includes a two-dimensional atomic layer made of a first material.