The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
May. 10, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Mirco Cantoro, Suwon-si, KR;
Zhenhua Wu, Suwon-si, KR;
Krishna Bhuwalka, Suwon-si, KR;
Sangsu Kim, Yongin-si, KR;
Shigenobu Maeda, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/267 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/02524 (2013.01); H01L 21/02538 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/088 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0642 (2013.01); H01L 29/1054 (2013.01); H01L 29/1079 (2013.01); H01L 29/165 (2013.01); H01L 29/1606 (2013.01);
Abstract
A semiconductor device includes an active pattern provided on a substrate and a gate electrode crossing over the active pattern. The active pattern includes a first buffer pattern on the substrate, a channel pattern on the first buffer pattern, a doped pattern between the first buffer pattern and the channel pattern, and a second buffer pattern between the doped pattern and the channel pattern. The doped pattern includes graphene injected with an impurity.