The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Jun. 21, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/267 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 29/04 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/2003 (2013.01); H01L 29/22 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/66742 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H01L 29/78618 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device is provided and includes a substrate and a stack on the substrate. The stack includes plural active layers that are vertically stacked and spaced apart from each other, and plural gate electrodes that are on the active layers, respectively, and vertically stacked. Each active layer includes a channel layer under a corresponding one of the gate electrodes, and a source/drain layer disposed at a side of the channel layer and electrically connected to the channel layer. The channel layer is made of a two-dimensional atomic layer of a first material.