Tokyo, Japan

Toshiaki Iwamatsu

Average Co-Inventor Count = 3.0

ph-index = 22

Forward Citations = 2,106(Granted Patents)

Forward Citations (Not Self Cited) = 1,955(Sep 21, 2024)

DiyaCoin DiyaCoin 5.95 

Inventors with similar research interests:


Location History:

  • Itami, JP (1995)
  • Itami-shi, Hyogo JP (1997)
  • Hyogo, JP (1994 - 2006)
  • Toyonaka, JP (2012)
  • Kawasaki, JP (2014 - 2018)
  • Kanagawa, JP (2013 - 2023)
  • Tokyo, JP (1997 - 2024)


Years Active: 1994-2025

where 'Filed Patents' based on already Granted Patents

177 patents (USPTO):

Title: Toshiaki Iwamatsu: A Pioneer in Semiconductor Device Innovations

Introduction:

Toshiaki Iwamatsu, based in Tokyo, JP, is a highly accomplished inventor and technologist. With an impressive total of 174 patents to his name, Iwamatsu has made significant contributions to the field of semiconductor devices. His groundbreaking work revolutionizes the manufacturing methods and designs employed in these critical components, paving the way for advancements in various technological domains.

Latest Patents:

Among Toshiaki Iwamatsu's latest patents, two standout innovations demonstrate his expertise in the semiconductor field. The first patent focuses on a "Semiconductor device and manufacturing method of the same." By introducing epitaxial layers selectively in specific regions of the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) structure, impurity ion diffusion is controlled effectively. This ensures the integrity and performance of the device, preventing impurity ions from reaching undesired areas.

The second patent highlights a "Semiconductor device and method for controlling semiconductor device," which pioneers the thin-film BOX-SOI (Buried Oxide Silicon on Insulator) structure. This innovation enables the simultaneous optimization of logic and memory circuits, resulting in enhanced speed and stability. The introduction of different conductivity well regions within the semiconductor support substrate further enhances the performance and robustness of these devices.

Career Highlights:

Over the course of his illustrious career, Toshiaki Iwamatsu has made significant contributions to the semiconductor industry. He has been associated with renowned companies such as Mitsubishi Electric Corporation and Renesas Technology Corp. During his tenure, Iwamatsu spearheaded numerous research projects and played a pivotal role in developing cutting-edge semiconductor technologies.

Collaborations:

Toshiaki Iwamatsu has had the privilege of collaborating with esteemed colleagues throughout his career. Among his notable collaborators are Takashi Ipposhi and Shigenobu Maeda. Together, they have worked tirelessly to push the boundaries of semiconductor device innovation, resulting in groundbreaking patents that have advanced the industry as a whole.

Conclusion:

Toshiaki Iwamatsu's exceptional talent and expertise have propelled him to the forefront of semiconductor device innovation. With an impressive patent portfolio and significant contributions to the field, his work continues to shape the landscape of modern technologies. As a pioneer in the industry, Iwamatsu's contributions inspire and challenge others to unlock new possibilities in the ever-evolving world of semiconductor devices.

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