Semiconductor device and method of manufacturing same

Abstract

Provided is a semiconductor device includes a first semiconductor layer provided on a first main surface of the semiconductor substrate, a plurality of first semiconductor regions selectively provided at upper layer parts of the semiconductor layer, a second semiconductor region selectively provided at an upper layer part of each of the first semiconductor regions, a second semiconductor layer provided on a JFET region corresponding to the first semiconductor layer between the first semiconductor regions, and configured to cover at least a part of the JFET region, a gate insulating film covering the first semiconductor regions and the second semiconductor layer, a third semiconductor layer provided on the second semiconductor layer, a gate electrode provided on the gate insulating film, an interlayer insulating film covering the gate electrode and the gate insulating film, a contact hole penetrating through the gate insulating film and the interlayer insulating film, at least the second semiconductor region being exposed to a bottom part thereof, a first main electrode provided on the interlayer insulating film, and configured to electrically connect to the second semiconductor region via the contact hole, and a second main electrode provided on a second main surface of the semiconductor substrate.