Munetaka Noguchi

Title: Munetaka Noguchi: Innovator in Silicon Carbide Semiconductor Technology

Introduction

Munetaka Noguchi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in silicon carbide (SiC) devices. With a total of three patents to his name, Noguchi's work has advanced the efficiency and reliability of power conversion devices.

Latest Patents

Noguchi's latest patents include a silicon carbide semiconductor device, a power conversion device, and a manufacturing method for silicon carbide semiconductor devices. The silicon carbide semiconductor device features a drift layer of n-type formed on a silicon carbide substrate, with a well region of p-type and a source region of p-type. A gate insulating film is in contact with these regions, and a gate electrode is formed on the gate insulating film. Notably, oxygen is incorporated in a specific region to enhance device performance. In his work on SiC-MOSFETs, he addresses the challenge of increasing threshold voltage while reducing channel resistance, thereby improving reliability in normally-off devices by adding elements such as sulfur, selenium, and tellurium to the channel region.

Career Highlights

Munetaka Noguchi is associated with Mitsubishi Electric Corporation, where he has been instrumental in developing cutting-edge semiconductor technologies. His innovative approaches have positioned him as a key figure in the advancement of SiC devices.

Collaborations

His notable coworker is Toshiaki Iwamatsu, with whom he has collaborated on various projects related to semiconductor technology.

Conclusion

Munetaka Noguchi's contributions to silicon carbide semiconductor technology have significantly impacted the field. His innovative patents and work at Mitsubishi Electric Corporation highlight his role as a leading inventor in this domain.