The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Nov. 29, 2018
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Munetaka Noguchi, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/18 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 29/1608 (2013.01); H01L 29/18 (2013.01); H01L 29/4236 (2013.01);
Abstract
In a SiC-MOSFET, to increase the threshold voltage while reducing the channel resistance is difficult. And, when the channel resistance is lowered, the reliability may be reduced in such a manner that a current may flow when the device is turned off and malfunction may occur when the device is used as a normally-off device. According to the present invention, the threshold voltage is increased while the channel resistance is reduced, and reliability when used as a normally-off device is improved by adding at least any of sulfur, selenium, and tellurium to the channel region of the SiC MOSFET.