The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Nov. 28, 2016
Applicant:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Inventors:
Tomokatsu Watanabe, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Yusuke Yamashiro, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/12 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/36 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/049 (2013.01); H01L 21/0465 (2013.01); H01L 29/04 (2013.01); H01L 29/0865 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/12 (2013.01); H01L 29/36 (2013.01); H01L 29/4916 (2013.01); H01L 29/66068 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01);
Abstract
A silicon carbide semiconductor device includes: an n-type drift layerprovided within an SiC layer; a plurality of p-type well regions; a JFET region JR serving as a part of the drift layersandwiched between the well regions; and a gate insulating filmand a gate electrodeat least covering the JFET region JR. The gate insulating filmand the gate electrodeinclude a different-element-containing regioncontaining an element that is different from elements constituting the gate insulating filmand the gate electrode