The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
May. 23, 2017
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Tomokatsu Watanabe, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Yusuke Yamashiro, Tokyo, JP;
Toshiaki Iwamatsu, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
The technique disclosed in the Description relates to a technique preventing dielectric breakdown while a silicon carbide semiconductor device is OFF, without degrading process throughput or yield. The silicon carbide semiconductor device relating to the technique disclosed in the Description includes a drift layer of a first conductivity type, a threading dislocation provided to penetrate the drift layer, and an electric-field reduction region of a second conductivity type disposed in a position in the surface layer of the drift layer, the position corresponding to the threading dislocation. The electric-field reduction region is an epitaxial layer.