The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Oct. 09, 2015
Floadia Corporation, Kodaira-shi, Tokyo, JP;
Yasuhiro Taniguchi, Kodaira, JP;
Hideo Kasai, Kodaira, JP;
Yasuhiko Kawashima, Kodaira, JP;
Ryotaro Sakurai, Kodaira, JP;
Yutaka Shinagawa, Kodaira, JP;
Kosuke Okuyama, Kodaira, JP;
FLOADIA CORPORATION, Tokyo, JP;
Abstract
In an anti-fuse memory includes a rectifier element of a semiconductor junction structure in which a voltage applied from a memory gate electrode to a word line is applied as a reverse bias in accordance with voltage values of the memory gate electrode and the word line, and does not use a conventional control circuit. Hence, the rectifier element blocks application of a voltage from the memory gate electrode to the word line. Therefore a conventional switch transistor that selectively applies a voltage to a memory capacitor and a conventional switch control circuit allowing the switch transistor to turn on or off are not necessary. Miniaturization of the anti-fuse memory and a semiconductor memory device are achieved correspondingly.