The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Jul. 25, 2019
Applicant:

Floadia Corporation, Kodaira, JP;

Inventors:

Kazumasa Yanagisawa, Kodaira, JP;

Tomoichi Hayashi, Kodaira, JP;

Satoshi Noda, Kodaira, JP;

Yasuhiro Taniguchi, Kodaira, JP;

Kosuke Okuyama, Kodaira, JP;

Assignee:

FLOADIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 9/38 (2018.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G06F 9/3893 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 2013/0045 (2013.01);
Abstract

A multiply-accumulate operation apparatus is capable of sufficiently restraining a sneak current when employing a precharge method where the magnitude of an electric current flowing through an output line is detected. In a synapse operation section, memory cells storing respective synaptic connection weights are arranged in rows and columns. Output lines are connected to memory cells in the corresponding column, and input lines are connected to memory cells in the corresponding row. Each output line is precharged, and then its electric potential is decreased during the corresponding memory cells flow cell currents corresponding to their synaptic connection weights. A memory element of each memory cell includes a memory transistor, a drain side transistor, and a source side transistor connected in series, and is connected between the corresponding input and output line. The memory transistor stores a synaptic connection weight according to the amount of charge in a charge storage layer.


Find Patent Forward Citations

Loading…