The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Aug. 01, 2016
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Toshihiro Tanaka, Akiruno, JP;
Yukiko Umemoto, Kodaira, JP;
Mitsuru Hiraki, Kodaira, JP;
Yutaka Shinagawa, Iruma, JP;
Masamichi Fujito, Kodaira, JP;
Kazufumi Suzukawa, Ichikawa, JP;
Hiroyuki Tanikawa, Akishima, JP;
Takashi Yamaki, Kodaira, JP;
Yoshiaki Kamigaki, Takamatsu, JP;
Shinichi Minami, Kodaira, JP;
Kozo Katayama, Tokyo, JP;
Nozomu Matsuzaki, Kokubunji, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a plurality of nonvolatile memory cells (). Each of the nonvolatile memory cells comprises a MOS type first transistor section () used for information storage, and a MOS type second transistor section () which selects the first transistor section. The second transistor section has a bit line electrode () connected to a bit line, and a control gate electrode () connected to a control gate control line. The first transistor section has a source line electrode () connected to a source line, a memory gate electrode () connected to a memory gate control line, and a charge storage region () disposed directly below the memory gate electrode. A gate withstand voltage of the second transistor section is lower than that of the first transistor section. Assuming that the thickness of a gate insulating film of the second transistor section is defined as tc and the thickness of a gate insulating film of the first transistor section is defined as tm, they have a relationship of tc<tm.