Kokubunji, Japan

Nozomu Matsuzaki

This inventor holds 66 USPTO granted patents and 5 published patent applications and 3 EPO patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Renesas Electronics Corporation, Renesas Technology Corp., Hitachi, Ltd.. Active years: 1992-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nozomu Matsuzaki. Retrieved from https://idiyas.com/inventor/nozomu-matsuzaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 66 

% Patents Active = 54.5

 

Average Co-Inventor Count = 4.5

ph-index = 17

Forward Citations = 841(Granted Patents)

Forward Citations (Not Self Cited) = 809(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hitachi, JP (1992 - 1997)
  • Tokyo, JP (2010 - 2013)
  • Kodaira, JP (2010 - 2015)
  • Kokubunji, JP (2001 - 2019)

Company Filing History:


Years Active: 1992-2019

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Areas of Expertise:
Semiconductor Device
Non-Volatile Memory
CMOS Structure
Integrated Circuit
Fabrication Method
Memory Device
Manufacturing Method
Recording Layer
Thermal Management
Memory Architecture
Memory Technology
Device Structure
66 patents (USPTO):Explore Patents

Title: Innovations of Nozomu Matsuzaki in Semiconductor Technology

Introduction: Nozomu Matsuzaki, an accomplished inventor based in Kokubunji, Japan, has made significant contributions in the field of semiconductor technology, holding an impressive total of 66 patents. His work primarily focuses on nonvolatile memory cells, which are crucial for modern electronic devices.

Latest Patents: Among his latest patents is a groundbreaking semiconductor device that includes a plurality of nonvolatile memory cells. Each of these cells features a metal-oxide-semiconductor (MOS) type first transistor section for information storage and a second transistor section that selects the first. This innovative design incorporates various elements such as a bit line electrode connected to a bit line and a control gate electrode linked to a control gate control line. The first transistor section includes a source line electrode connected to a source line and a memory gate electrode linked to a memory gate control line. A distinctive aspect of his patent is that the gate withstand voltage of the second transistor section is lower than that of the first, with specific relationships defined concerning the thickness of the gate insulating films.

Career Highlights: Matsuzaki’s career is notably marked by his tenure at major companies like Renesas Electronics Corporation and Renesas Technology Corporation, where he contributed to the development of advanced semiconductor technologies. His work has not only advanced the semiconductor industry but also plays a vital role in enhancing the performance and efficiency of electronic devices.

Collaborations: Throughout his career, Matsuzaki has collaborated with notable coworkers such as Toshihiro Tanaka and Yutaka Shinagawa. These collaborations have fostered a creative environment that has led to multiple innovations and advancements in semiconductor design.

Conclusion: Nozomu Matsuzaki stands out as a prominent figure in the field of semiconductor technology, demonstrating a remarkable ability to innovate. His extensive patent portfolio exemplifies his commitment to advancing the technology sector, solidifying his reputation as a leading inventor. As the demand for efficientsemiconductors continues to grow, Matsuzaki's contributions will likely have a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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