The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Nov. 05, 2009
Yuichi Matsui, Kawasaki, JP;
Nozomu Matsuzaki, Kokubunji, JP;
Norikatsu Takaura, Tokyo, JP;
Naoki Yamamoto, Kochi, JP;
Hideyuki Matsuoka, Tokyo, JP;
Tomio Iwasaki, Tsukuba, JP;
Yuichi Matsui, Kawasaki, JP;
Nozomu Matsuzaki, Kokubunji, JP;
Norikatsu Takaura, Tokyo, JP;
Naoki Yamamoto, Kochi, JP;
Hideyuki Matsuoka, Tokyo, JP;
Tomio Iwasaki, Tsukuba, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.