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For the Inventor, By the Inventor

Koganei, Japan

Yuichi Matsui

USPTO Granted Patents = 33 


Average Co-Inventor Count = 3.4

ph-index = 8

Forward Citations = 237(Granted Patents)


Location History:

  • Kokubunji, JP (2001 - 2007)
  • Kogane, JP (2010)
  • Koganei, JP (2004 - 2012)
  • Kawasaki, JP (2009 - 2014)

Company Filing History:

goldMedal13 out of 3,781 
 
Renesas Technology Corp.
 patents
silverMedal12 out of 42,485 
 
Hitachi, Ltd.
 patents
bronzeMedal8 out of 7,524 
 
Renesas Electronics Corporation
 patents

Years Active: 2001-2014

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33 patents (USPTO):
1. 8890107 - Semiconductor memory (2014-11-18),
2. 8866120 - Semiconductor memory (2014-10-21),
3. 8859344 - Semiconductor memory (2014-10-14),
4. 8618523 - Semiconductor device (2013-12-31),
5. 8106441 - Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same (2012-01-31),
6. 8044489 - Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same (2011-10-25),
7. 8000126 - Semiconductor device with recording layer containing indium, germanium, antimony and tellurium (2011-08-16),
8. 7804118 - Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same (2010-09-28),
9. 7800153 - Capacitive electrode having semiconductor layers with an interface of separated grain boundaries (2010-09-21),
10. 7728376 - Semiconductor memory device (2010-06-01),
11. 7683419 - Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same (2010-03-23),
12. 7667218 - Semiconductor integrated circuit device and method of manufacturing the same (2010-02-23),
13. 7638786 - Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface (2009-12-29),
14. 7511327 - Capacitive electrode having semiconductor layers with an interface of separated grain boundaries (2009-03-31),
15. 7408218 - Semiconductor device having plural dram memory cells and a logic circuit (2008-08-05),

Title: Yuichi Matsui: Pioneering Inventor from Koganei, Japan

Introduction: Yuichi Matsui is a renowned inventor hailing from Koganei, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Matsui's latest patents include advancements in robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to creating a more efficient and sustainable future.

Career Highlights: With a career spanning over two decades, Matsui has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Matsui has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and creativity that has led to numerous successful projects and inventions.

Conclusion: Yuichi Matsui's dedication to pushing the boundaries of technology and his passion for innovation continue to inspire the next generation of inventors and entrepreneurs worldwide.

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