The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
May. 31, 2006
Norikatsu Takaura, Tokyo, JP;
Yuichi Matsui, Kawasaki, JP;
Motoyasu Terao, Hinode, JP;
Yoshihisa Fujisaki, Hachioji, JP;
Nozomu Matsuzaki, Kodaira, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Takahiro Morikawa, Hachioji, JP;
Norikatsu Takaura, Tokyo, JP;
Yuichi Matsui, Kawasaki, JP;
Motoyasu Terao, Hinode, JP;
Yoshihisa Fujisaki, Hachioji, JP;
Nozomu Matsuzaki, Kodaira, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Takahiro Morikawa, Hachioji, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
On an insulating film () in which a plug () as a lower electrode is embedded, a laminated layer pattern of an insulating film () made of tantalum oxide, a recording layer () made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film () made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film () between the recording layer () and the plug (), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer () can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (), the difference in work function between the insulating film () and the recording layer () is increased, and the programming voltage of the phase change memory can be reduced.