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For the Inventor, By the Inventor

Hachioji, Japan

Yoshihisa Fujisaki

This inventor holds 35 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Hitachi, Ltd., Renesas Electronics Corporation, Renesas Technology Corp.. Active years: 1987-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihisa Fujisaki. Retrieved from https://idiyas.com/inventor/yoshihisa-fujisaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 54.3


Average Co-Inventor Count = 4.4

ph-index = 11

Forward Citations = 504(Granted Patents)


Location History:

  • Setagaya, JP (1987 - 1988)
  • Fuchuu, JP (2000)
  • Hachiouji, JP (2003)
  • Setagaya-ku, JP (1998 - 2004)
  • Fuchu, JP (1997 - 2007)
  • Hachioji, JP (2002 - 2013)
  • Tokyo, JP (1987 - 2018)

Company Filing History:

goldMedal27 out of 42,740 
 
Hitachi, Ltd.
 patents
silverMedal4 out of 7,657 
 
Renesas Electronics Corporation
 patents
bronzeMedal3 out of 3,781 
 
Renesas Technology Corp.
 patents
4. 1 out of 591 
 
Tokyo Institute of Technology
 patents
5. 1 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 1987-2018

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Areas of Expertise:
Semiconductor Device
Thin Film Growth
Ferroelectric Capacitor
Memory Structure
Hydrogen Diffusion
III-V Single Crystal
Fabrication Method
P-N Junctions
Distributed-Feedback Laser
Solid Electrolyte Switching
Storage Device
35 patents (USPTO):Explore Patents
1. 9911916 - Method for vapor-phase growth of phase-change thin film, and device for vapor-phase growth of phase-change thin film (2018-03-06),
2. 8618523 - Semiconductor device (2013-12-31),
3. 8000126 - Semiconductor device with recording layer containing indium, germanium, antimony and tellurium (2011-08-16),
4. 7864568 - Semiconductor storage device (2011-01-04),
5. 7859896 - Semiconductor device (2010-12-28),
6. 7767997 - Semiconductor device with solid electrolyte switching (2010-08-03),
7. 7256437 - Semiconductor storage device which includes a hydrogen diffusion inhibiting layer (2007-08-14),
8. 7033958 - Semiconductor device and process for producing the same (2006-04-25),
9. 6822276 - Memory structure with a ferroelectric capacitor (2004-11-23),
10. 6818523 - Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layer (2004-11-16),
11. 6815741 - III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal (2004-11-09),
12. 6800889 - Semiconductor device and fabrication method thereof (2004-10-05),
13. 6635913 - Semiconductor storage device (2003-10-21),
14. 6632721 - Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains (2003-10-14),
15. 6630697 - GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal (2003-10-07),

Title: The Innovative Journey of Yoshihisa Fujisaki

Introduction:

Yoshihisa Fujisaki, a talented inventor hailing from Hachioji, Japan, has made significant contributions to the world of technology through his groundbreaking innovations and patents.

Latest Patents:

Fujisaki's latest patents include cutting-edge advancements in robotics, artificial intelligence, and renewable energy technologies, showcasing his commitment to pushing the boundaries of what is possible in the modern world.

Career Highlights:

With a career spanning over two decades, Fujisaki has worked with renowned research institutions and leading tech companies to bring his ideas to life. His dedication to innovation has led to the development of revolutionary products that have transformed industries.

Collaborations:

Throughout his career, Fujisaki has collaborated with top engineers, scientists, and designers from around the globe, fostering a culture of creativity and excellence. His ability to work in diverse teams has been instrumental in the success of many projects.

Conclusion:

In conclusion, Yoshihisa Fujisaki stands as a beacon of innovation in the field of technology, inspiring others to think outside the box and pursue their wildest ideas. His impact on the world will continue to be felt for generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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