The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jan. 11, 2007
Takahiro Morikawa, Hachioji, JP;
Motoyasu Terao, Hinode, JP;
Norikatsu Takaura, Tokyo, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Nozomu Matsuzaki, Kodaira, JP;
Yoshihisa Fujisaki, Hachioji, JP;
Masaharu Kinoshita, Kokubunji, JP;
Yuichi Matsui, Kawasaki, JP;
Takahiro Morikawa, Hachioji, JP;
Motoyasu Terao, Hinode, JP;
Norikatsu Takaura, Tokyo, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Nozomu Matsuzaki, Kodaira, JP;
Yoshihisa Fujisaki, Hachioji, JP;
Masaharu Kinoshita, Kokubunji, JP;
Yuichi Matsui, Kawasaki, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.