The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2011

Filed:

Dec. 07, 2006
Applicants:

Yoshihisa Fujisaki, Hachioji, JP;

Satoru Hanzawa, Hachioji, JP;

Kenzo Kurotsuchi, Kodaira, JP;

Nozomu Matsuzaki, Kodaira, JP;

Norikatsu Takaura, Tokyo, JP;

Inventors:

Yoshihisa Fujisaki, Hachioji, JP;

Satoru Hanzawa, Hachioji, JP;

Kenzo Kurotsuchi, Kodaira, JP;

Nozomu Matsuzaki, Kodaira, JP;

Norikatsu Takaura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor storage device such as a phase change memory, a technique which can realize high integration is provided. The semiconductor storage device includes a phase change thin filmhaving two stable phases of a crystal state with low electric resistance and an amorphous state with high electric resistance, upper plug electrodesandprovided on one side of the phase change thin film, a lower electrodeprovided on the other side of the phase change thin film, a selecting transistorwhose drain/source terminals are connected to the upper plug electrodeand the lower electrode, and a selecting transistorwhose drain/source terminals are connected to the upper plug electrodeand the lower electrode, and a first memory cell is configured with the selecting transistorand a phase change regionin the phase change thin filmsandwiched between the upper plug electrodeand the lower electrode, and a second memory cell is configured with the selecting transistorand a phase change regionin the phase change thin filmsandwiched between the upper plug electrodeand the lower electrode


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