The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Jun. 25, 2003
Applicant:
Inventors:
Hiroshi Miki, Shinjuku-ku, JP;
Keiko Kushida, Kodaira, JP;
Yasuhiro Shimamoto, Kokubunji, JP;
Shinichiro Takatani, Koganei, JP;
Yoshihisa Fujisaki, Fuchu, JP;
Hiromi Nakai, Yokohama, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
Y01L 2/120 ;
U.S. Cl.
CPC ...
Y01L 2/120 ;
Abstract
A method for forming a semiconductor storage device includes steps of forming a memory cell transistor, forming a first plug connected to the memory cell transistor, forming a second plug of a hydrogen diffusion inhibiting layer, forming capacitor electrodes and a capacitor insulator between the capacitor electrodes and forming a hydrogen adsorption inhibiting layer.