The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Sep. 07, 1999
Applicant:
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
Abstract
It is an object of the present invention to provide a fine memory cell structure preventing a reaction between an interlayer insulating film and a ferroelectric film and suitable for high integration. According to the invention, there is provided a structure in which a reaction barrier film is interposed between a ferroelectric film and an interlayer insulating film and side walls of a diffusion barrier film are not brought into direct contact with the ferroelectric film . Thereby, the reaction between the interlayer insulating film and the ferroelectric film can be restrained and exfoliation of the ferroelectric film can be prevented.