Kodaira, Japan

Kazuyoshi Torii

This inventor holds 28 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Hitachi, Ltd., Hitachi Vlsi Engineering Corp., Renesas Technology Corp.. Active years: 1993-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuyoshi Torii. Retrieved from https://idiyas.com/inventor/kazuyoshi-torii

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 71.4

Average Co-Inventor Count = 6.4

ph-index = 10

Forward Citations = 224(Granted Patents)


Location History:

  • Hachiouji, JP (2000)
  • Hachioji, JP (2000 - 2004)
  • Kodaira, JP (1993 - 2005)
  • Tsukuba, JP (2004 - 2006)
  • Higashumurayama, JP (2011)

Company Filing History:


Years Active: 1993-2011

Loading Chart...
Areas of Expertise:
Semiconductor Device
Fabrication Method
Integrated Circuit
Ferroelectric Capacitor
Organic Thin Film Transistor
Field Effect Transistor
Memory Structure
Manufacturing Process
Self-Aligned Diffusion Barrier
Process for Fabricating
Wiring Strip
Transition-Metal Film
28 patents (USPTO):Explore Patents

Title: Kazuyoshi Torii: A Pioneer in Semiconductor Innovations

Introduction

Kazuyoshi Torii, based in Kodaira, Japan, is a notable inventor with an impressive portfolio of 28 patents. His work primarily revolves around the advancement of semiconductor technology, particularly in the realm of organic thin film transistors. His innovative contributions have significantly influenced the manufacturing processes and efficiency of semiconductor devices.

Latest Patents

Torii's recent patents showcase his ingenuity in addressing challenges within semiconductor device production. One notable invention is the "Method of Manufacturing a Semiconductor Device Having an Organic Thin Film Transistor." This invention overcomes the limitations of traditional printing methods, which often suffer from positional displacement due to the complexity of electrode positioning. By utilizing self-alignment techniques, Torii's method allows for the creation of flexible substrates with organic semiconductors at a lower cost.

Another pivotal patent is titled "Semiconductor Device and Manufacturing Method Thereof." This method improves the fabrication of field-effect transistors (FETs) by introducing a gate insulation film with an SiO equivalent thickness of 2 nm or more. This innovation effectively minimizes leak current to one-hundredth of existing SiO films. The strategic formation of SiO films prevents shifts in threshold voltage and degradation of mobility, thereby reducing electric power consumption while increasing current in smaller-sized transistors.

Career Highlights

Torii has made substantial contributions to the semiconductor industry through his tenure at renowned companies such as Hitachi, Ltd. and Hitachi VLSI Engineering Corporation. His experience in these esteemed organizations has equipped him with the skills and knowledge necessary to drive innovation within the field.

Collaborations

Throughout his career, Torii collaborated with other talented inventors, including Jun Sugiura and Osamu Tsuchiya. These partnerships have likely fostered a creative environment, leading to groundbreaking advancements in semiconductor technologies.

Conclusion

Kazuyoshi Torii's impact on the semiconductor industry is undeniable. His innovative patents reflect a commitment to enhancing manufacturing processes and reducing costs associated with semiconductor devices. As the demand for advanced electronic components continues to grow, Torii's contributions will undoubtedly play a pivotal role in shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…