The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Jun. 20, 2002
Shinichi Saito, Kodaira, JP;
Kazuyoshi Torii, Tsukuba, JP;
Takahiro Onai, Ome, JP;
Toshiyuki Mine, Fussa, JP;
Shinichi Saito, Kodaira, JP;
Kazuyoshi Torii, Tsukuba, JP;
Takahiro Onai, Ome, JP;
Toshiyuki Mine, Fussa, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In a miniaturized field effect transistor, the roughness of the interface between a gate dielectric film and a gate electrode is controlled on an atomic scale. The thickness variation of the gate dielectric film is lowered, whereby a field effect transistor with high mobility is manufactured. An increase in the mobility in the field effect transistor can be achieved not only in the case of using a conventional SiOthermal oxide film as the gate dielectric film but also in the case of using a high dielectric material for the gate dielectric film.