Company Filing History:

16 out of 42,485

Hitachi, Ltd.

patents

5 out of 3,781

Renesas Technology Corp.

patents

1 out of 832,680

Other

patents

Years Active: 1990-2013

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22 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8436333 - Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method (2013-05-07),

2. 7405588 - Device and data processing method employing the device (2008-07-29),

3. 7042055 - Semiconductor device and manufacturing thereof (2006-05-09),

4. 7042051 - Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region (2006-05-09),

5. 7029988 - Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium (2006-04-18),

6. 6982465 - Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics (2006-01-03),

7. 6878606 - Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium (2005-04-12),

8. 6667199 - Semiconductor device having a replacement gate type field effect transistor and its manufacturing method (2003-12-23),

9. 6524903 - Method of manufacturing a semiconductor device having two peaks in an impurity concentration distribution (2003-02-25),

10. 6313012 - Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulator (2001-11-06),

11. 6004865 - Method of fabricating multi-layered structure having single crystalline (1999-12-21),

12. 5962880 - Heterojunction bipolar transistor (1999-10-05),

13. 5598015 - Hetero-junction bipolar transistor and semiconductor devices using the (1997-01-28),

14. 5523602 - Multi-layered structure having single crystalline semiconductor film (1996-06-04),

15. 5430317 - Semiconductor device (1995-07-04),

Title: Takahiro Onai: A Pioneer in Silicon-Based Innovations

Introduction

Takahiro Onai, a prominent inventor based in Ome, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio comprising 22 patents, his work focuses primarily on innovations in silicon light-emitting devices and related technologies.

Latest Patents

Among his latest patents, Takahiro Onai has developed groundbreaking devices such as the silicon light-emitting diode, silicon optical transistor, and silicon laser along with its manufacturing method. One notable invention details a light-emitting device that incorporates a first electrode unit for injecting electrons and a second electrode unit for injecting holes. The light-emitting units, made from single-crystal silicon, are characterized by their extremely thin structure, enhancing the device's overall efficiency. Another patent revolves around a device and data processing method that employs a changeable LSI—integrated circuit capable of altering its functions through MEMS switches, which maintain states and provide optimal performance in terms of resistance.

Career Highlights

Throughout his career, Takahiro Onai has worked with leading technology firms, including Hitachi, Ltd. and Renesas Technology Corporation. His innovative approach and technical expertise have positioned him as a key contributor within the semiconductor industry, driving advancements that leverage the unique properties of silicon materials.

Collaborations

Onai has collaborated with talented individuals, including Katsuyoshi Washio and Tohru Nakamura. These partnerships have enriched his research and development efforts, fostering an environment of creativity and innovation that propels his projects forward.

Conclusion

Takahiro Onai stands out as a leading figure in the realm of silicon-based innovations, with a strong legacy of patents that reflect his commitment to advancing the technology landscape. His contributions not only enhance our understanding of semiconductor devices but also pave the way for future breakthroughs in the field.

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