Semiconductor device with cmos-field-effect transistors having improved drain current characteristics

Abstract

The present invention provides a semiconductor device including n-channel field effect transistors and p-channel field effect transistors all of which have excellent drain current characteristics. In a semiconductor device including an n-channel field effect transistorand a p-channel field effect transistor, a stress control filmcovering a gate electrodeof the n-channel field effect transistorundergoes film stress mainly composed of tensile stress. A stress control filmcovering a gate electrodeof the p-channel field effect transistorundergoes film stress mainly caused by compression stress compared to the filmof the n-channel field effect transistor. Accordingly, drain current is expected to be improved in both the n-channel field effect transistor and the p-channel field effect transistor. Consequently, the characteristics can be generally improved.