IDiyas

For the Inventor, By the Inventor

Chiyoda, Japan

Yukihiro Kumagai

USPTO Granted Patents = 15

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 130(Granted Patents)


Location History:

  • Chiyoda, JP (2003 - 2007)
  • Tsuchiura, JP (2006 - 2007)
  • Hitachinaka, JP (2011 - 2015)

Company Filing History:

goldMedal8 out of 42,485 
 
Hitachi, Ltd.
 patents
silverMedal5 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal1 out of 7,524 
 
Renesas Electronics Corporation
 patents
4. 1 out of 7 
 
Trecenti Technologies, Inc.
 patents
5. 1 out of 45 
 
Hitachi Power Semiconductor Device, Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2003-2015

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15 patents (USPTO):Explore Patents
1. 9076774 - Semiconductor device and a method of manufacturing same (2015-07-07),
2. 7906848 - Semiconductor device (2011-03-15),
3. 7244643 - Semiconductor device and manufacturing method thereof (2007-07-17),
4. 7205617 - Semiconductor device including active regions and gate electrodes for field effect transistors, with a trench formed between the active regions (2007-04-17),
5. 7196395 - Semiconductor device and manufacturing method (2007-03-27),
6. 7193270 - Semiconductor device with a vertical transistor (2007-03-20),
7. 7109568 - Semiconductor device including n-channel fets and p-channel fets with improved drain current characteristics (2006-09-19),
8. 7009279 - Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof (2006-03-07),
9. 6982465 - Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics (2006-01-03),
10. 6965140 - Semiconductor device including storage capacitor (2005-11-15),
11. 6891761 - Semiconductor device and manufacturing method (2005-05-10),
12. 6720603 - CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER (2004-04-13),
13. 6639263 - Semiconductor device with copper wiring connected to storage capacitor (2003-10-28),
14. 6534375 - METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS (2003-03-18),
15. 6521932 - Semiconductor device with copper wiring connected to storage capacitor (2003-02-18),

Title: The Innovative Journey of Yukihiro Kumagai

Introduction: Yukihiro Kumagai is a visionary inventor hailing from Chiyoda, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yukihiro Kumagai holds several patents in the realm of artificial intelligence and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Kumagai has worked with leading tech companies in Japan, spearheading projects that have revolutionized the industry. His innovative solutions have garnered international acclaim and recognition.

Collaborations: Kumagai has collaborated with top research institutions and universities worldwide, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the development of cutting-edge technologies that have reshaped the tech landscape.

Conclusion: Yukihiro Kumagai's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his position as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and innovators to push the boundaries of what is possible in the realm of technology.

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